Areas of Interest
- Analog/Mixed-Signal Integrated Circuit Design
- Extreme Environment IC Design
- Multi-gate Transistor Circuit Design on SOI
- Sub 100-nm CMOS Analog Design
- BS in Electrical Engineering, The University of Tennessee, 1991
- MS in Electrical & Computer Engineering, Georgia Institute of Technology, 1993
- PhD in Electrical & Computer Engineering, Georgia Institute of Technology, 1996
- PhD Dissertation: A 1-Volt CMOS Wide Dynamic Range Operational Amplifier
Benjamin J. Blalock is the Blalock-Kennedy-Pierce Professor in the Department of Electrical Engineering and Computer Science at the University of Tennessee where he directs the Integrated Circuits and Systems Laboratory (ICASL).
He received his B.S. degree in electrical engineering from the University of Tennessee, Knoxville, in 1991 and the M.S. and Ph.D. degrees, also in electrical engineering, from the Georgia Institute of Technology, Atlanta, in 1993 and 1996 respectively.
Dr. Blalock has received numerous teaching and research awards at UT. His research focus at UT includes analog integrated circuit design for extreme environments (both wide temperature and radiation) on CMOS and SiGe BiCMOS, high-temperature/high-voltage gate drive circuits for power electronics, multi-channel monolithic instrumentation systems, mixed-signal/mixed-voltage circuit design for systems-on-a-chip, and analog circuit techniques for sub 100-nm CMOS.
Dr. Blalock has co-authored over 100 refereed papers. During the 2007 IEEE Nuclear Science and Radiation Effects Conference (NSREC) he taught a short course on Radiation Effects on Analog Integrated Circuits and Extreme Environment Design. He has also worked as an analog IC design consultant for Cypress Semiconductor, Concorde Microsystems, and Global Power Electronics. Dr. Blalock is a senior member of the IEEE.