11/06 : Thesis Defense - "Analysis & Modelling of a SiGe High Electron Mobility Transistor" - Simi Mohanty, Master’s Candidate

Who: Simi Mohanty, Master’s Candidate
Dr Syed K Islam, Major Professor

What: “Analysis & Modeling of a SiGe High Electron Mobility Transistor”

Where: 414 Ferris Hall

When: Monday, November 6, 2009 at 9.00 A.M.

Abstract: This project presents work on analytical modeling and simulation of SiGe Schottky gate HEMT. An analytical model for the threshold voltage of the Schottky-gate HEMT is presented. An expression to calculate accurately minimum gate voltage VGmin of p-channel Schottky-gate HEMT is derived. Using the expressions, VTHp and VGmin are calculated. Current-voltage characteristics, transconductance and cutoff frequency are calculated and plotted using the extended model. The effects of different device and material parameter variation on VTHp and VGmin are also investigated.

An analytical temperature model for the schottky-gate HEMT is proposed. The temperature variation of threshold voltage, current-voltage characteristics and transconductance are simulated using the analytical model.